至为芯 MOSFET AGM311M(无线充MOS)
99% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Description:
AGM311MAP is the high cell density trenched
N-ch MOSFETs, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
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